RJH1BF7RDPQ-80 - High Speed Power Switching
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Renesa
RJH1BF7RDPQ-80 Features
* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C)
* Gate to emitter volta
