Datasheet Specifications
- Part number
- RJH1BF7RDPQ-80
- Manufacturer
- Renesas ↗
- File Size
- 161.72 KB
- Datasheet
- RJH1BF7RDPQ-80_Renesas.pdf
- Description
- High Speed Power Switching
Description
Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching .
Features
* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C)Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign lawRJH1BF7RDPQ-80 Distributors
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