RJH1DF7RDPQ-80 - High Speed Power Switching

Product Overview

Renesas

Datasheet Details

Part number	RJH1DF7RDPQ-80
Manufacturer	Renesas
File Size	161.11 KB
Description	High Speed Power Switching
Datasheet	RJH1DF7RDPQ-80 Datasheet
Additional preview pages of the RJH1DF7RDPQ-80 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = 25°C).
Gate to emitter voltage rating ±30 V.
Pb-free lead plating R07DS0413EJ0100 Rev.1.00 May 18, 2011 Outline.

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Published: Jul 20, 2012 |