RJH1DF7RDPQ-80

High Speed Power Switching

Renesas

RJH1DF7RDPQ-80 Features

* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = 25°C)

* Gate to emitter vol

RJH1DF7RDPQ-80 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH1DF7RDPQ-80 Datasheet (161.11 KB)