Datasheet4U Logo Datasheet4U.com

RJH1DF7RDPQ-80 High Speed Power Switching

RJH1DF7RDPQ-80 Description

Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJH1DF7RDPQ-80 Features

* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = 25°C)
* Gate to emitter vol

RJH1DF7RDPQ-80 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

📥 Download Datasheet

Preview of RJH1DF7RDPQ-80 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • RJH3047 - Silicon N-Channel IGBT High Speed Power Switching (ETC)
  • RJH3047ADPK - Silicon N-Channel IGBT High Speed Power Switching (ETC)
  • RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
  • RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)

📌 All Tags

High Speed Power Switching Renesas
Renesas RJH1DF7RDPQ-80-like datasheet