RJH30H1DPP-M0 Datasheet (Renesas) - High Speed Power Switching

RJH30H1DPP-M0, High Speed Power Switching

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Renesa

RJH30H1DPP-M0 Features

* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 2