RJH30H1DPP-M0 Datasheet, Switching, Renesas

RJH30H1DPP-M0 Features

  • Switching
  • Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to

PDF File Details

Part number:

RJH30H1DPP-M0

Manufacturer:

Renesas ↗

File Size:

212.43kb

Download:

📄 Datasheet

Description:

High speed power switching. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

Datasheet Preview: RJH30H1DPP-M0 📥 Download PDF (212.43kb)
Page 2 of RJH30H1DPP-M0 Page 3 of RJH30H1DPP-M0

RJH30H1DPP-M0 Application

  • Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

TAGS

RJH30H1DPP-M0
High
Speed
Power
Switching
Renesas

📁 Related Datasheet

RJH30H2DPK-M0 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-I.

RJH3047 - Silicon N-Channel IGBT High Speed Power Switching (ETC)
http://.. .

RJH3047ADPK - Silicon N-Channel IGBT High Speed Power Switching (ETC)
http://.. .

RJH1BF6RDPQ-80 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conduct.

RJH1BF7RDPQ-80 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conduct.

RJH1CD5DPQ-A0 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH1CD5DPQ-A0 1200 V - 15 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to.

RJH1CD5DPQ-E0 - IGBT (Renesas)
Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to e.

RJH1CD6DPQ-A0 - IGBT (Renesas)
Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to.

RJH1CD6DPQ-E0 - IGBT (Renesas)
Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to e.

RJH1CD7DPQ-A0 - IGBT (Renesas)
Preliminary Datasheet RJH1CD7DPQ-A0 1200 V - 25 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to.

Stock and price

part
Renesas Electronics Corporation
Insulated Gate Bipolar Transistor
Rochester Electronics
RJH30H1DPP-M0#T2
131 In Stock
Qty : 1000 units
Unit Price : $1.51
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts