Datasheet Specifications
- Part number
- RJH30H1DPP-M0
- Manufacturer
- Renesas ↗
- File Size
- 212.43 KB
- Datasheet
- RJH30H1DPP-M0_Renesas.pdf
- Description
- High Speed Power Switching
Description
Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching .
Features
* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ. , trr = 2Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign lawRJH30H1DPP-M0 Distributors
📁 Related Datasheet
📌 All Tags