Part number:
RJH30H1DPP-M0
Manufacturer:
File Size:
212.43 KB
Description:
High speed power switching.
* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 2
RJH30H1DPP-M0 Datasheet (212.43 KB)
RJH30H1DPP-M0
212.43 KB
High speed power switching.
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