RJH30H1DPP-M0 - High Speed Power Switching

Renesas

RJH30H1DPP-M0 Datasheet Preview — Preview of RJH30H1DPP-M0 PDF

Datasheet Details

Part number	RJH30H1DPP-M0
Manufacturer	Renesas ↗
File Size	212.43 KB
Description	High Speed Power Switching
Datasheet	RJH30H1DPP-M0_Renesas.pdf

RJH30H1DPP-M0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ. , trr = 23 ns typ. Isolated package: TO-220FL R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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Published: Jul 20, 2012 |