RJH30H2DPK-M0 Datasheet, Switching, Renesas

RJH30H2DPK-M0 Features

• Switching
• Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed swit

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Part number:

RJH30H2DPK-M0

Manufacturer:

Renesas ↗

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212.20kb

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📄 Datasheet

Description:

High speed power switching. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJH30H2DPK-M0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJH30H2DPK-M0

Renesas

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