Datasheet Specifications
- Part number
- RJH30H2DPK-M0
- Manufacturer
- Renesas ↗
- File Size
- 212.20 KB
- Datasheet
- RJH30H2DPK-M0_Renesas.pdf
- Description
- High Speed Power Switching
Description
Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching .
Features
* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns tyApplications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign lawRJH30H2DPK-M0 Distributors
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