RJH30H2DPK-M0 Datasheet (Renesas) - High Speed Power Switching

RJH30H2DPK-M0, High Speed Power Switching

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Renesa

RJH30H2DPK-M0 Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns ty