RJH30H2DPK-M0

High Speed Power Switching

Renesas

RJH30H2DPK-M0 Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns ty

RJH30H2DPK-M0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH30H2DPK-M0 Datasheet (212.20 KB)