RJH65S04DPQ-A0 Datasheet, Igbt, Renesas

✔ RJH65S04DPQ-A0 Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and

✔ RJH65S04DPQ-A0 Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

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RJH65S04DPQ-A0

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJH65S04DPQ-A0 IGBT Renesas