RJH65S04DPQ-A0 - IGBT

Renesas

RJH65S04DPQ-A0 Datasheet Preview — Preview of RJH65S04DPQ-A0 PDF

Datasheet Details

Part number	RJH65S04DPQ-A0
Manufacturer	Renesas ↗
File Size	127.29 KB
Description	IGBT
Datasheet	RJH65S04DPQ-A0_Renesas.pdf

RJH65S04DPQ-A0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Outline.

📁 RJH65S04DPQ-A0 Similar Datasheet

RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)
RJH60D3DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D5DPK - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH65T04BDPM-A0 - IGBT
RJH65T14DPQ-A0 - IGBT
RJH65T46DPQ-A0 - IGBT
RJH65T47DPQ-A0 - IGBT
RJH6086BDPK - IGBT
RJH6087BDPK - High Speed Power Switching

Published: Jul 21, 2012 |