RJH65T46DPQ-A0 Datasheet, Igbt, Renesas

✔ RJH65T46DPQ-A0 Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and

PDF File Details

Renesas manufacturer logo

Part number:

RJH65T46DPQ-A0

Manufacturer:

Renesas ↗

File Size:

260.19kb

Download:

📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

📥 Download PDF (260.19kb)

📁 Related Datasheet

RJH65T47DPQ-A0 - IGBT (Renesas)
Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Rev.1.01 Oct 22, 2015 Features .

RJH65T04BDPM-A0 - IGBT (Renesas)
RJH65T04BDPM-A0 650V - 30A - IGBT Power Switching Features  Trench gate and thin wafer technology  Built in fast recovery diode in one package  Low.

RJH65T14DPQ-A0 - IGBT (Renesas)
RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven Features  Optimized for current resonance application  Low collector .

RJH65S04DPQ-A0 - IGBT (Renesas)
Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V .

RJH6086BDPK - IGBT (Renesas)
Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching Features  Ultra high speed switching tf = 36 ns typ. (at IC = 30 A,.

RJH6087BDPK - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 55 ns typ. (at IC = 30.

RJH6088BDPK - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40.

RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60C9DPD Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS.

RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode .. Prel.

RJH60D0DPM - IGBT (Renesas)
Preliminary Datasheet RJH60D0DPM 600V - 22A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitt.

Stock and price

Renesas Electronics Corporation

IGBT TRENCH 650V 80A TO-247A

DigiKey

RJH65T46DPQ-A0-T0

383 In Stock

Qty : 500 units

Unit Price : $7.68

🛒 Buy Now

TAGS

RJH65T46DPQ-A0 IGBT Renesas