Renesas manufacturer logo Part number: RJH65T14DPQ-A0 Manufacturer: Renesas ↗ File Size: 290.66kb Download: 📄 Datasheet Description: Igbt.
RJH65T04BDPM-A0 - IGBT (Renesas) RJH65T04BDPM-A0 650V - 30A - IGBT Power Switching Features Trench gate and thin wafer technology Built in fast recovery diode in one package Low.
RJH65T46DPQ-A0 - IGBT (Renesas) Preliminary Datasheet RJH65T46DPQ-A0 650V - 40A - IGBT Application: Power Factor Correction circuit R07DS1259EJ0100 Rev.1.00 May 18, 2015 Features .
RJH65T47DPQ-A0 - IGBT (Renesas) Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Rev.1.01 Oct 22, 2015 Features .
RJH65S04DPQ-A0 - IGBT (Renesas) Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V .
RJH6086BDPK - IGBT (Renesas) Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A,.
RJH6087BDPK - High Speed Power Switching (Renesas) Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 55 ns typ. (at IC = 30.
RJH6088BDPK - High Speed Power Switching (Renesas) Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40.
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology) RJH60C9DPD Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS.
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology) RJH60D0DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode .. Prel.
RJH60D0DPM - IGBT (Renesas) Preliminary Datasheet RJH60D0DPM 600V - 22A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitt.
