Part number:
RJH65T14DPQ-A0
Manufacturer:
File Size:
290.66 KB
Description:
Igbt.
* Optimized for current resonance application
* Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology Outline RENESAS Package code: PRSS0003ZH-A (
RJH65T14DPQ-A0 Datasheet (290.66 KB)
RJH65T14DPQ-A0
290.66 KB
Igbt.
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