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RJH65T14DPQ-A0

IGBT

RJH65T14DPQ-A0 Features

* Optimized for current resonance application

* Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology Outline RENESAS Package code: PRSS0003ZH-A (

RJH65T14DPQ-A0 Datasheet (290.66 KB)

Preview of RJH65T14DPQ-A0 PDF

Datasheet Details

Part number:

RJH65T14DPQ-A0

Manufacturer:

Renesas ↗

File Size:

290.66 KB

Description:

Igbt.

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