Datasheet4U Logo Datasheet4U.com

RJH65T47DPQ-A0

IGBT

RJH65T47DPQ-A0 Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology (G7H series)

* High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A,

RJH65T47DPQ-A0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH65T47DPQ-A0 Datasheet (259.35 KB)

Preview of RJH65T47DPQ-A0 PDF

Datasheet Details

Part number:

RJH65T47DPQ-A0

Manufacturer:

Renesas ↗

File Size:

259.35 KB

Description:

Igbt.

📁 Related Datasheet

RJH65T46DPQ-A0 IGBT (Renesas)

RJH65T04BDPM-A0 IGBT (Renesas)

RJH65T14DPQ-A0 IGBT (Renesas)

RJH65S04DPQ-A0 IGBT (Renesas)

RJH6086BDPK IGBT (Renesas)

RJH6087BDPK High Speed Power Switching (Renesas)

RJH6088BDPK High Speed Power Switching (Renesas)

RJH60C9DPD Silicon N Channel IGBT (Renesas Technology)

RJH60D0DPK Silicon N Channel IGBT (Renesas Technology)

RJH60D0DPM IGBT (Renesas)

TAGS

RJH65T47DPQ-A0 IGBT Renesas

Image Gallery

RJH65T47DPQ-A0 Datasheet Preview Page 2 RJH65T47DPQ-A0 Datasheet Preview Page 3

RJH65T47DPQ-A0 Distributor