RJH65T47DPQ-A0
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Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor
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RJH65T46DPQ-A0 - IGBT
(Renesas)
Preliminary Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT Application: Power Factor Correction circuit
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Features
.
RJH65T04BDPM-A0 - IGBT
(Renesas)
RJH65T04BDPM-A0
650V - 30A - IGBT Power Switching
Features
Trench gate and thin wafer technology Built in fast recovery diode in one package Low.
RJH65T14DPQ-A0 - IGBT
(Renesas)
RJH65T14DPQ-A0
650V - 50A - IGBT Application: Induction Heating
Microwave Oven
Features
Optimized for current resonance application Low collector .
RJH65S04DPQ-A0 - IGBT
(Renesas)
Preliminary Datasheet
RJH65S04DPQ-A0
650V - 50A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.6 V .
RJH6086BDPK - IGBT
(Renesas)
Preliminary Datasheet
RJH6086BDPK
600 V - 45 A - IGBT High Speed Power Switching
Features
Ultra high speed switching tf = 36 ns typ. (at IC = 30 A,.
RJH6087BDPK - High Speed Power Switching
(Renesas)
Preliminary Datasheet
RJH6087BDPK
Silicon N Channel IGBT High Speed Power Switching
Features
• Ultra high speed switching tf = 55 ns typ. (at IC = 30.
RJH6088BDPK - High Speed Power Switching
(Renesas)
Preliminary Datasheet
RJH6088BDPK
Silicon N Channel IGBT High Speed Power Switching
Features
• Ultra high speed switching tf = 60 ns typ. (at IC = 40.
RJH60C9DPD - Silicon N Channel IGBT
(Renesas Technology)
RJH60C9DPD
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
RENESAS Package code: PRSS.
RJH60D0DPK - Silicon N Channel IGBT
(Renesas Technology)
RJH60D0DPK
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
..
Prel.
RJH60D0DPM - IGBT
(Renesas)
Preliminary Datasheet
RJH60D0DPM
600V - 22A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitt.