RJH65T47DPQ-A0 IGBT

Renesas

Description

Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Rev.1.01 Oct 22, 2015 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJH65T47DPQ-A0
Manufacturer: Renesas ↗
File Size: 259.35 KB
Datasheet: RJH65T47DPQ-A0-Renesas.pdf
Description: IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology (G7H series)
* High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A,

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