Part number:
RJH65T47DPQ-A0
Manufacturer:
File Size:
259.35 KB
Description:
Igbt.
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology (G7H series)
* High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A,
RJH65T47DPQ-A0 Datasheet (259.35 KB)
RJH65T47DPQ-A0
259.35 KB
Igbt.
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