RJH65T04BDPM-A0 Datasheet, Igbt, Renesas

✔ RJH65T04BDPM-A0 Features

Trench gate and thin wafer technology
Built in fast recovery diode in one package
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, V

✔ RJH65T04BDPM-A0 Application

Power Factor Correction circuit Key Performance Type RJH65T04BDPM-A0 VCES 650 V IC 30 A VCE(sat), TC=25

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RJH65T04BDPM-A0

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Renesas ↗

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📄 Datasheet

Description:

Igbt.

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Stock and price

Renesas Electronics Corporation

IGBT TRENCH 650V 60A TO-3PFP

DigiKey

RJH65T04BDPMA0-T2F

757 In Stock

Qty : 10 units

Unit Price : $8.64

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RJH65T04BDPM-A0 IGBT Renesas