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RJH65T04BDPM-A0 - IGBT

Renesas

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Datasheet Details

Part number	RJH65T04BDPM-A0
Manufacturer	Renesas ↗
File Size	209.94 KB
Description	IGBT
Datasheet	RJH65T04BDPM-A0-Renesas.pdf

RJH65T04BDPM-A0 Product details

Features

Trench gate and thin wafer technology.
Built in fast recovery diode in one package.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C).
Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022.
High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25 C, inductive load).
Operation frequency (20kHz ≤ f ˂ 40kHz).

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Published: Jan 14, 2024 |