RJH65T04BDPM-A0 Datasheet - Renesas

RJH65T04BDPM-A0 IGBT

RJH65T04BDPM-A0 Features

* Trench gate and thin wafer technology

* Built in fast recovery diode in one package

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C)

* Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022

* High speed

Datasheet Details

RJH65T04BDPM-A0

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