Part number:
RJH65T04BDPM-A0
Manufacturer:
File Size:
209.94 KB
Description:
Igbt.
* Trench gate and thin wafer technology
* Built in fast recovery diode in one package
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C)
* Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022
* High speed
RJH65T04BDPM-A0 Datasheet (209.94 KB)
RJH65T04BDPM-A0
209.94 KB
Igbt.
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