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RJL6013DPE N-Channel Power MOSFET

RJL6013DPE Description

Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJL6013DPE Features

* Built-in fast recovery diode
* Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching R07DS0437EJ0200 (Previous: REJ03G1748-0100) Rev.2.00 Jun 16, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name LD

RJL6013DPE Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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N-Channel Power MOSFET Renesas
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