RJL6032DPP-M0 Silicon N Channel MOS FET

Renesas Technology

Description

Preliminary Datasheet RJL6032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJL6032DPP-M0
Manufacturer: Renesas ↗ Technology
File Size: 139.44 KB
Datasheet: RJL6032DPP-M0_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET

Features

* Low on-state resistance RDS(on) = 3.3  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
* High speed switching
* Built in fast recovery diode R07DS0250EJ0100 Rev.1.00 Jan 27, 2010 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 2 3 S

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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