RJL6032DPP-M0 Datasheet, Fet, Renesas Technology

RJL6032DPP-M0 Features

• Fet
• Low on-state resistance RDS(on) = 3.3  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
• High speed switching
• Built in fast recovery diode R07DS0250EJ0100 Rev.1.0

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RJL6032DPP-M0

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Renesas ↗ Technology

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📄 Datasheet

Description:

Silicon n channel mos fet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJL6032DPP-M0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJL6032DPP-M0

Renesas Technology

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