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RJL6014DPP Datasheet - Renesas Technology

Silicon N Channel MOS FET

RJL6014DPP Features

* Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)

* Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)

* Low leakage current

* High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00

RJL6014DPP General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJL6014DPP Datasheet (139.36 KB)

Preview of RJL6014DPP PDF

Datasheet Details

Part number:

RJL6014DPP

Manufacturer:

Renesas ↗ Technology

File Size:

139.36 KB

Description:

Silicon n channel mos fet.

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RJL6014DPP Silicon Channel MOS FET Renesas Technology

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