RJL6014DPP Datasheet, Fet, Renesas Technology

RJL6014DPP Features

• Fet
• Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
• Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 1

PDF File Details

Part number:

RJL6014DPP

Manufacturer:

Renesas ↗ Technology

File Size:

139.36kb

Download:

📄 Datasheet

Description:

Silicon n channel mos fet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJL6014DPP Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

TAGS

RJL6014DPP

Renesas Technology

📁 Related Datasheet

RJL6012DPE - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance L.

RJL6013DPE - N-Channel Power MOSFET (Renesas)
Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS.

RJL6013DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL6013DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1691-0200 Rev.2.00 Jun 13, 2008 Features • • • • Built-in .

RJL6015DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL6015DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance L.

RJL6018DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL6018DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance L.

RJL6020DPK - Silicon N-Channel MOSFET (Renesas Technology)
RJL6020DPK Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.17 Ω typ. (at .

RJL6032DPP-M0 - Silicon N Channel MOS FET (Renesas Technology)
Preliminary Datasheet RJL6032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.3  typ. (at .

RJL60S5DPE - 600V - 20A - SJ MOS FET (Renesas Technology)
Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching Features  Superjunction MOSFET  Built-in fast recovery diode  .

RJL-001 - Single 10/100 BASE-TX Filtered Connector Module (Taimag)
.. NUMBER : RD-SDRJL-001 DATE :2003/08/13 -CL(REV:3) Single 10/100 BASE-TX Filtered Connector Module MODEL NO. : RJL-001 Features F.

RJL5012DPE - N-Channel Power MOSFET (Renesas)
Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS.