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RJL6014DPP Silicon N Channel MOS FET

RJL6014DPP Description

Preliminary Datasheet RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJL6014DPP Features

* Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
* Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)
* Low leakage current
* High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00

RJL6014DPP Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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