RJL6014DPP Datasheet (Renesas Technology) - Silicon N Channel MOS FET

RJL6014DPP, Silicon N Channel MOS FET

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Renesa

RJL6014DPP Features

* Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)

* Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)

* Low leakage current

* High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00