Part number:
UPA2763
Manufacturer:
File Size:
260.35 KB
Description:
Mos field effect transistor.
* Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
* Low Ciss 2100 pF TYP.
* Built-in gate protection diode
* Thin type surface mount package with heat spreader (8-pin HVSON)
* RoHS Comp
UPA2763
260.35 KB
Mos field effect transistor.
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