UPA2763 Datasheet, Transistor, Renesas

UPA2763 Features

  • Transistor
  • Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
  • Low Ciss 2100 pF TYP.
  • Built-in g

PDF File Details

Part number:

UPA2763

Manufacturer:

Renesas ↗

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260.35kb

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📄 Datasheet

Description:

Mos field effect transistor. R07DS0003EJ0100 Rev.1.00 May 31, 2010 The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power

Datasheet Preview: UPA2763 📥 Download PDF (260.35kb)
Page 2 of UPA2763 Page 3 of UPA2763

UPA2763 Application

  • Applications Features
  • Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID

TAGS

UPA2763
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

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