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UPA2763 MOS FIELD EFFECT TRANSISTOR

UPA2763 Description

Preliminary Data Sheet μ PA2763 MOS FIELD EFFECT TRANSISTOR .
R07DS0003EJ0100 Rev.

UPA2763 Features

* Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
* Low Ciss 2100 pF TYP.
* Built-in gate protection diode
* Thin type surface mount package with heat spreader (8-pin HVSON)
* RoHS Comp

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