UPA2762UGR

The UPA2762UGR is MOS FIELD EFFECT TRANSISTOR designed by Renesas.

Product Overview

Renesas

Datasheet Details

Part number	UPA2762UGR
Manufacturer	Renesas
File Size	222.60 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2762UGR_Renesas.pdf
Additional preview pages of the UPA2762UGR datasheet.

Product details

Description

R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer.

Features

Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A).
Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V, VGS = 0 V).
Small and surface mount package (Power SOP8).
RoHS Compliant Ordering Information Part No. μ PA2762UGR-E1-AT ∗1 μ PA2762UGR-E2-AT ∗1 LEAD.

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Published: Sep 17, 2013 |