UPA2762UGR Datasheet, Transistor, Renesas

UPA2762UGR Features

• Transistor
• Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
• Low Ciss: Ciss = 710 pF TYP. (VDS = 15 V,

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UPA2762UGR

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📄 Datasheet

Description:

Mos field effect transistor. R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applic

UPA2762UGR Application

• Applications of a notebook computer. Features
• Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 m

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UPA2762UGR

Renesas

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