UPA2761UGR Datasheet, Transistor, Renesas

UPA2761UGR Features

• Transistor
• Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7 A)
• Low Ciss: Ciss = 550 pF TYP. (VDS = 15 V, VG

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UPA2761UGR

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📄 Datasheet

Description:

Mos field effect transistor. R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applic

UPA2761UGR Application

• Applications of a notebook computer. Features
• Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(on)2 = 30 mΩ

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UPA2761UGR

Renesas

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