UPA2761UGR

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7 A)

* Low Ciss: Ciss = 550 pF TYP. (VDS = 15 V, VGS = 0 V)

* Small and surface mount package (Power SOP8)

* RoHS Compliant Ordering Information Part

UPA2761UGR

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Mos field effect transistor.

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UPA2761UGR MOS FIELD EFFECT TRANSISTOR Renesas

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