UPA2765T1A Datasheet, Mosfet, Renesas

UPA2765T1A Features

• Mosfet
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
• 4.5 V Gate

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UPA2765T1A

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📄 Datasheet

Description:

N-channel mosfet. The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. R07DS0882EJ0102 Rev.1.02 No

UPA2765T1A Application

• Applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipmen

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UPA2765T1A

Renesas

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