Datasheet4U Logo Datasheet4U.com

HAT1072H Silicon P-Channel Power MOSFET

HAT1072H Description

HAT1072H Silicon P Channel Power MOS FET Power Switching .

HAT1072H Features

* Capable of
* 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS =
* 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 REJ03G1155-0700 (Previous: ADE-208-1534E

📥 Download Datasheet

Preview of HAT1072H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HAT1000-S - Current Transducer (LEM)
  • HAT1016R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT1020R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT1021R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT1023R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT1023RJ - P-Channel 20V MOSFET (VBsemi)
  • HAT1024R - Silicon P-Channel Power MOSFET (Renesas)
  • HAT1025R - Silicon P-Channel Power MOSFET (Renesas)

📌 All Tags

Silicon P-Channel Power MOSFET Renesas Technology
Renesas Technology HAT1072H-like datasheet