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HAT2099H Silicon N-Channel Power MOSFET

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Description

HAT2099H Silicon N Channel Power MOS FET Power Switching .

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Features

* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS (on) = 2.9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1187-0500 (Previous: ADE-208-1432C) R

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Silicon N-Channel Power MOSFET Renesas Technology
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