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HAT2170H Silicon N-Channel MOSFET

HAT2170H Description

HAT2170H Silicon N Channel MOS FET Power Switching .

HAT2170H Features

* High speed switching
* Capable of 7 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 4 G Absolute Maximum Ratings

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Silicon N-Channel MOSFET Renesas Technology
Renesas Technology HAT2170H-like datasheet