2SA1862 Datasheet - Rohm

High-voltage Switching Transistor

* 1) High breakdown voltage. (BVCEO =

* 400V) 2) Low saturation voltage. (Typ. VCE (sat) =

* 0.3V at IC / IB =

* 500mA /

* 100mA) 3) High switching speed, typically tf = 0.4µs at IC =

* 1A. 4) Wide SOA (safe operating area). zExternal dimensions (Unit : mm) 0.75 5.

2SA1862

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High-voltage switching transistor.

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2SA1862 High-voltage Switching Transistor Rohm

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