* 1) A collector current is large. 2) VCE(sat) ≤ -370mV At lc= -1.5A / lB= -75mA 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 0.16 0.3 ~0.6 ROHM : TSMT3 2SB1706 Abbreviated symbol : XY (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings (Ta=25°C) Limits Symbol
* 30 VCBO
* 30 VCEO
2SB1706
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Low frequency amplifier.
2SB1706
Transistors
Low frequency amplifier
2SB1706
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
Each lead has same d.
📁 Related Datasheet
2SB170 - Ge PNP Alloy Junction Transistor
(ETC)
..
.
2SB1700 - PNP/NPN Epitaxial Planar Silicon Darlington Transistors
(Sanyo Semicon Device)
Ordering number : ENN7380
2SB1700 / 2SD2663
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB1700 / 2SD2663
Driver Applications
Applicatio.
2SB1705 - Low frequency amplifier
(Rohm)
2SB1705 Transistors
Low frequency amplifier
2SB1705
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
Each lead has same .
2SB1707 - General purpose Amplifier
(Rohm)
2SB1707
General purpose amplification(-12V,-4A)
Parameter
VCEO IC
Value
-12V -4A
lFeatures
1) Collector current is large. (4A) 2) VCE(sat)≦ -250mV .
2SB1708 - Transistors
(Rohm)
2SB1708
Transistors
Low frequency amplifier
2SB1708
Application Low frequency amplifier Driver External dimensions (Units : mm)
2.8 1.6
0.95 0.95
.
2SB1709 - Transistors
(Rohm)
.
2SB171 - Ge PNP Alloy Junction Transistor
(ETC)
..
.
2SB1710 - PNP Middle Power Transistor
(Rohm)
2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is large. 2)Collector saturation.
