Datasheet4U Logo Datasheet4U.com

2SB1713 - Bipolar transistor

Datasheet Summary

Features

  • 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure PNP epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XW zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol V.

📥 Download Datasheet

Datasheet preview – 2SB1713

Datasheet Details

Part number 2SB1713
Manufacturer ROHM
File Size 122.34 KB
Description Bipolar transistor
Datasheet download datasheet 2SB1713 Datasheet
Additional preview pages of the 2SB1713 datasheet.

📁 Similar Datasheet

  • 2SB171 - Ge PNP Alloy Junction Transistor (ETC)
  • 2SB170 - Ge PNP Alloy Junction Transistor (ETC)
  • 2SB1700 - PNP/NPN Epitaxial Planar Silicon Darlington Transistors (Sanyo Semicon Device)
  • 2SB172 - Ge PNP Alloy Junction Transistor (ETC)
  • 2SB1721 - Silicon Power Transistors (NEC)
  • 2SB173 - Ge PNP Alloy Junction Transistor (ETC)
  • 2SB1734 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SB1739 - / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB175 - Ge PNP Alloy Junction Transistor (ETC)
  • 2SB176 - Ge PNP Alloy Junction Transistor (ETC)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure PNP epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XW zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −6 −3 −6 0.
Published: |