* 1) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 2) Emission spectrum well suited to silicon detectors. 3) Good current-optical output linearity. 4) Long life, high reliability. 5) Low cost, clear epoxy resin package. FAbsolute maximum ratings (Ta = 25_C) 176 Sensors FElectrical and opti
SIR-56ST3F Datasheet (53.22 KB)
SIR-56ST3F
53.22 KB
Infrared light emitting diode.
Sensors
Infrared light emitting diode, top view type
SIR-56ST3F
The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This .
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