RU20P18L P-Channel Advanced Power MOSFET

Ruichips

RU20P18L Description

RU20P18L P-Channel Advanced Power MOSFET .
D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

RU20P18L Features

* -20V/-18A, RDS (ON) =30mΩ(Typ. )@VGS=-4.5V RDS (ON) =45mΩ(Typ. )@VGS=-2.5V
* Low On-Resistance
* Super High Dense Cell Design
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green

RU20P18L Applications

* Load Switch

📥 Download Datasheet

RU20P18L Datasheet Preview — Preview of RU20P18L PDF

Datasheet Details

Part number: RU20P18L
Manufacturer: Ruichips
File Size: 322.84 KB
Datasheet: RU20P18L-Ruichips.pdf
Description: P-Channel Advanced Power MOSFET

📁 Related Datasheet

RU20A - FAST RECOVERY RECTIFIER DIODE (EIC)
RU2 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU2441B04 - RF Module (Samsung)
RU2441B04GCA - RF Module (Samsung)
RU2441B04UAA - RF Module (Samsung)
RU2441H04 - RF Module (Samsung)
RU2441H04CAA - RF Module (Samsung)
RU2441H04CDA - RF Module (Samsung)

📌 All Tags

P-Channel Advanced Power MOSFET Ruichips

Ruichips RU20P18L-like datasheet

RU20P2B - P-Channel Advanced Power MOSFET
RU20P3B - P-Channel Advanced Power MOSFET
RU20P4C - P-Channel Advanced Power MOSFET
RU20P4C6 - P-Channel Advanced Power MOSFET
RU20P5E - P-Channel Advanced Power MOSFET
RU20P7C - P-Channel Advanced Power MOSFET