RU20P18L Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU20P18L, P-Channel Advanced Power MOSFET

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

RU20P18L Features

* -20V/-18A, RDS (ON) =30mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.5V

* Low On-Resistance

* Super High Dense Cell Design

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green