RU20P4C6 Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU20P4C6, P-Channel Advanced Power MOSFET

S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sin

RU20P4C6 Features

* -20V/-4A, RDS (ON) =35mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Load Switch

* Power Manag