RU20P2B - P-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU20P2B
Manufacturer	Ruichips
File Size	324.26 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU20P2B-Ruichips.pdf

RU20P2B Product details

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient D

Features

-20V/-2.4A, RDS (ON) =95mΩ(Typ. )@VGS=-4.5V RDS (ON) =140mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 25, 2016 |