MBR30200CT-1 Datasheet - SANGDEST MICROELECTRONICS

MBR30200CT-1 SCHOTTKY RECTIFIER

MBR30200CT-1 Features

* 150 °C TJ operation

* Center tap configuration

* Low forward voltage drop

* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

* High frequency operation

* Guard ring for enhanced ruggedness a

Datasheet Details

MBR30200CT-1

164.08 KB

Schottky rectifier.

📁 Related Datasheet

MBR30200CT-1 SCHOTTKY RECTIFIER (SENSITRON SEMICONDUCTOR)

MBR30200CT 30A High Power Schottky Barrier Rectifiers (CITC)

MBR30200CT Schottky Barrier Rectifier (MOSPEC)

MBR30200CT Schottky Barrier Rectifier (INCHANGE)

MBR30200CT High Power Schottky Diode (VIKING TECH)

MBR30200CT Schottky Barrier Rectifier (GME)

MBR30200CT SCHOTTKY RECTIFIER (SANGDEST MICROELECTRONICS)

MBR30200CT Power Schottky Rectifier (SIRECT)

MBR30200CT Schottky Barrier Rectifiers (Microsemi)

MBR30200CT SCHOTTKY BARRIER RECTIFIER (Zowie Technology)

TAGS

MBR30200CT-1 SCHOTTKY RECTIFIER SANGDEST MICROELECTRONICS

Image Gallery

MBR30200CT-1 Distributor