SW1N80A

MOSFET

SEMIPOWER

SW1N80A Features

* High ruggedness

* RDS(ON) (Max 16 Ω)@VGS=10V

* Gate Charge (Max 7nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable po

SW1N80A General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or ful.

SW1N80A Datasheet (671.34 KB)

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Datasheet Details

Part number:

SW1N80A

Manufacturer:

SEMIPOWER

File Size:

671.34 KB

Description:

Mosfet.

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SW1N80A MOSFET SEMIPOWER

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SW1N80A Features

SW1N80A General Description

Datasheet Details

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