ST2SD882T Datasheet - SEMTECH

ST2SD882T NPN Silicon Power Transistor

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (pulse) Total power dissipation (Ta = 25 C) O Symbol VCBO VCEO VEBO IC IC(pulse) Ptot Ptot Tj TS Value 40 30 5 3 7 1 10 150 -55 to +150 Unit V V V A A W W O Total pow.

ST2SD882T_SEMTECH.pdf