Description
2
SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
Features
- 13
1 TO-252-2L
1.Gate
3 2.Drain 3.Source
123
TO-251N-3L
1 23
TO-262-3L 1 2 3
TO-220F-3L.
- 4A, 600V, RDS(on)(typ. )=2.0@VGS=10V.
- Low gate charge.
- Low Crss.
- Fast switching.
- Improved dv/dt capability
12
3 TO-220-3L
12 3
TO-251J-3L.