SVF2N60T

600V N-CHANNEL MOSFET

SVF2N60T Features

* 2A,600V,RDS(on)(typ.)=3.7@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-251J-3L 12 3 TO-220F-3L ORDERING INFORMATION Part No. SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60DTR Package Type TO-251D-3L TO-251J-3L TO-126F-3L TO-220F

SVF2N60T General Description

2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superi.

SVF2N60T Datasheet (419.59 KB)