SVF2N65F

650V N-CHANNEL MOSFET

SVF2N65F Features

* ∗ 1A,650V, RDS(on)（typ）=4.1Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF2N65F Package TO-220F-3L Marking SVF2N65F Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn

SVF2N65F General Description

SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide su.

SVF2N65F Datasheet (508.48 KB)