SVF4N65M

N-channel MOSFET

SVF4N65M Features

* ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65T SVF4N65F SVF4N65FG SVF4N65M Package TO-220-3L TO-220F-3L TO-220F-3L TO-251-3L Marking SVF4N65T SVF4N65F SVF4N65FG SVF4N65M Material

SVF4N65M General Description

SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provid.

SVF4N65M Datasheet (642.54 KB)