SH5126SV325816NI
SMART Modular
426.95kb
4gb (512mx64) ddr3 sdram module. 512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, NonECC, 256Mx8 Based, PC3L-12800, DDR3L-1600-11-11-11, 30.00mm, 1.35V/1.5V, Halogen-
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SH5126SV351816-SE - 4GB (512Mx64) DDR3 SDRAM Module
(SMART Modular)
SH5126SV351816-SE
July 13, 2015
Part Numbers SH5126SV351816-SE
Ordering Information
Description
512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, No.
SH5127UD351838SE - 4GB (512Mx72) DDR3 SDRAM Module
(SMART Modular)
SH5127UD351838SE
May 22, 2015
Part Numbers SH5127UD351838SE
Ordering Information
Description
Device Vendor
512Mx72 (4GB), DDR3, 240-Pin Unbuffere.
SH50D13A - High Speed Thyristor
(Toshiba)
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SH50F13A - High Speed Thyristor
(Toshiba)
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SH50H13A - High Speed Thyristor
(Toshiba)
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SH50J13A - High Speed Thyristor
(Toshiba)
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SH50L13A - High Speed Thyristor
(Toshiba)
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SH50xx13A - High Speed Thyristor
(Toshiba)
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SH52B - SCHOTTKY BARRIER RECTIFIERS
(GME)
Schottky Barrier Rectifiers
Production specification
SH52B--SH54B
Features
Metal silicon junction, majority carrier conduction High surge capabi.
SH52C - Schottky Barrier Rectifiers
(GME)
Schottky Barrier Rectifiers
Production specification
SH52C--SH54C
Features
Metal silicon junction, majority carrier conduction High surge capabi.
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