M29F200B - 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply.
For Program and Erase operations the necessary high voltages are generated internally.
The device can also
M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output MEMORY BLOCKS Boot Block (Top or Bottom location) Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ER
M29F200B Features
* ourth command cycle inputs the address and data to be programmed. For an Erase instruction (Block or Chip), the fourth and fifth cycles
