M29F512B - 512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory
See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connected to this device.
Address Inputs (A0-A15).
The Address Inputs select the cells in the memory array to access during Bus Read operations.
During Bus Write operations they control the commands sent to
M29F512B 512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME 8µs per Byte typical PROGRAM/ERASE CONTROLLER Embedded Byte Program algorithm Embedded Chip Erase algorithm Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND Faster Production/Batch Programming LOW POWE
M29F512B Features
* 1st Addr X 555 555 555 555 X X 555 Data F0 AA AA AA AA A0 90 AA 2AA 2AA 2A
