STB28NM50N Datasheet - ST Microelectronics

STB28NM50N N-Channel Power MOSFET

These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficien.

STB28NM50N Features

* Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N

* VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 1 2 3 D²PAK TO-247 Application Switching application

STB28NM50N_STMicroelectronics.pdf