STB28N60DM2 Datasheet - STMicroelectronics

STB28N60DM2 N-channel Power MOSFET

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS pha.

STB28N60DM2 Features

* Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely

STB28N60DM2-STMicroelectronics.pdf