STB28N65M2 Datasheet - STMicroelectronics

STB28N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Or.

STB28N65M2 Features

* Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Applications

* Switching applications Descr

STB28N65M2-STMicroelectronics.pdf