STB28NM60ND N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source.

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Datasheet Specifications

Part number: STB28NM60ND
Manufacturer: INCHANGE
File Size: 264.80 KB
Datasheet: STB28NM60ND-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID=23A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Tempe

STB28NM60ND Distributors

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STB28NM60ND N-Channel MOSFET INCHANGE

INCHANGE STB28NM60ND-like datasheet