Datasheet Details
- Part number
- STB28NM60ND
- Manufacturer
- INCHANGE
- File Size
- 264.80 KB
- Datasheet
- STB28NM60ND-INCHANGE.pdf
- Description
- N-Channel MOSFET
STB28NM60ND Description
isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance
APPLICATIONS.
Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source.
STB28NM60ND Features
* Drain Current
* ID=23A@ TC=25℃
* Drain Source Voltage-
: VDSS= 600V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 150mΩ(Max)
* 100% avalanche tested
STB28NM60ND Applications
* Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Tempe
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