STB5BK50Z-1 Datasheet - ST Microelectronics

STB5BK50Z-1 N-CHANNEL POWER MOSFET

The SuperMESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established stripDataSheet4U.com based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most deman.

www.DataSheet4U.com STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 s s s s s s VDSS 500 500 500 500 500 V V V V V RDS(on) < 1.5 < 1.5 < 1.5 < 1.5 < 1.5 Ω Ω Ω Ω Ω ID 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A Pw 70 W 25 W 70 W 70 W 70 W 1 2 3 TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZE.

STB5BK50Z-1 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

STB5BK50Z-1 Datasheet (705.96 KB)