STD3NK60Z

N-CHANNEL Power MOSFET

ST Microelectronics

STD3NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STD3NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STD3NK60Z Datasheet (604.05 KB)

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STD3NK60Z

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STMicroelectronics ↗

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604.05 KB

Description:

N-channel power mosfet.
STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET .

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STD3NK60Z N-CHANNEL Power MOSFET ST Microelectronics

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STD3NK60Z Features

STD3NK60Z General Description

Datasheet Details

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