STP11NK50Z

N-CHANNEL Power MOSFET

ST Microelectronics

STP11NK50Z Features

* Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W

* Extremely high dv/dt capability

* 100% avalanche tested

* Gate charge minimized

* Very low intrinsic capacitances Application

* Swi

STP11NK50Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D2PAK.

STP11NK50Z Datasheet (380.34 KB)