STP11NM60 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 *.

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Datasheet Specifications

Part number: STP11NM60
Manufacturer: INCHANGE
File Size: 201.20 KB
Datasheet: STP11NM60-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Typical RDS(on)=0.4Ω
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching application
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 44 PD Total Dissipation 160 Tj Operating Junction Temperat

STP11NM60 Distributors

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STP11NM60 N-Channel MOSFET INCHANGE

INCHANGE STP11NM60-like datasheet