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STP110N10F7

N-Channel MOSFET

STP110N10F7 Features

* Drain Current

* ID= 110A@ TC=25℃

* Drain Source Voltage- : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Source

STP110N10F7 General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. O.

STP110N10F7 Datasheet (270.33 KB)

Preview of STP110N10F7 PDF

Datasheet Details

Part number:

STP110N10F7

Manufacturer:

INCHANGE

File Size:

270.33 KB

Description:

N-channel mosfet.

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STP110N10F7 N-Channel MOSFET INCHANGE

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