Datasheet4U Logo Datasheet4U.com

STP11NM60N N-Channel MOSFET

STP11NM60N Description

isc N-Channel Mosfet Transistor *.

STP11NM60N Features

* Drain Current ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP11NM60N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Pulse Drain Current 40 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Opera

📥 Download Datasheet

Preview of STP11NM60N PDF
datasheet Preview Page 2

Datasheet Details

Part number
STP11NM60N
Manufacturer
INCHANGE
File Size
269.63 KB
Datasheet
STP11NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • STP11NM60ND - N-Channel Power MOSFET (STMicroelectronics)
  • STP11NM60 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STP11NM60A - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STP11NM60AFP - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STP11NM60FD - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STP11NM60FDFP - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STP11NM60FP - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STP11NM65N - N-channel MOSFET (STMicroelectronics)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE STP11NM60N-like datasheet