STP110N8F6 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 *.

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Datasheet Specifications

Part number: STP110N8F6
Manufacturer: INCHANGE
File Size: 223.66 KB
Datasheet: STP110N8F6-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 110 85 440 PD Total Dissipation 200 Tj Operating Junction Tempe

STP110N8F6 Distributors

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STP110N8F6 N-Channel MOSFET INCHANGE

INCHANGE STP110N8F6-like datasheet