STP110N8F7 Datasheet - STMicroelectronics

STP110N8F7, N-channel Power MOSFET

STP110N8F7 N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

Features

* Order code STP110N8F7 VDS 80 V RDS(on)max 7.5 mΩ ID 80 A PTOT 170 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity

STP110N8F7-STMicroelectronics.pdf