STP110N8F6 Datasheet - STMicroelectronics

STP110N8F6, N-CHANNEL POWER MOSFET

STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data .
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

Features

* Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%
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* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

STP110N8F6-STMicroelectronics.pdf