STP110N8F6 Datasheet - STMicroelectronics

STP110N8F6 - N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N8F6 $0Y Table 1. Device summary Marking Package 110N8F6 TO-220 Packing Tub.

STP110N8F6 Features

* Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

STP110N8F6-STMicroelectronics.pdf