STP110N10F7 Datasheet - STMicroelectronics

STP110N10F7 N-CHANNEL POWER MOSFET

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Order codes STF110N10F7 STP110N10F7 Table 1. Device summary Marking Pac.

STP110N10F7 Features

* TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W

* Ultra low on-resistance

* 100% avalanche tested Applications

* Switching applications Figure 1. Internal schematic diagram '7$% Des

STP110N10F7-STMicroelectronics.pdf